Strain Relaxation Effect on the Peak Wavelength of Blue InGaN/GaN Multi-Quantum Well Micro-LEDs

In this paper, the edge strain relaxation of InGaN/GaN MQW micro-pillars is studied. Micro-pillar arrays with a diameter 3–20 μm were prepared on blue GaN LED wafer by inductively coupled plasma (ICP) etching. The peak wavelength shift caused was tested using micro-LED pillar array room temperature photoluminescence (PL) spectrum measurements. results show that there nearly 3 nm between micro-pillar arrays, high range region in small size pillar. Furthermore, 19 pillar’s Raman employed to observe relaxation. It found E2H mode at moved frequency, which verified an = 0.1%. Then, exact and distribution InGaN quantum wells simulated finite element method, provides effective verification our PL analysis. methods paper provide good references for design analysis small-size devices.